Study of Copper Nitride Thin Film Structure

Copper–titanium thin film interaction

Interaction between 5 lm thick copper and 50 nm thin titanium films was investigated as a function of annealing temperature and time using MeV He Rutherford backscattering, X-ray diffraction and dynamic Secondary Ion Mass Spectrometry. Samples were made by depositing 10 nm of titanium on a PECVD silicon oxynitride, followed by 50 nm of titanium nitride and 50 nm of titanium in the said order. I...

Synthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler

Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...

Surface scattering mechanisms of tantalum nitride thin film resistor

In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-zero TCR for the TaN thin film resistor (TFR). Through current fitting, the carrier conduction mech...

Fracture in a thin film of nanotwinned copper

Quantitative Modeling and Measurement of Copper Thin Film Adhesion

Numerous mechanisms have been identified as fundamental to the adhesion of thin metallic films. The primary mechanism is the thermodynamic work of adhesion of the interface, which in its most basic description is the difference between the surface energies of the two materials and that of the interface. This quantity is often described as leveraging the contributions of other mechanisms. One of...